Orientation of Bi3.2La0.8Ti3O12 Ferroelectric Thin Films with Different Annealing schedules

Abstract

Fatigue-free Bi3.2La0.8Ti3O12 Ferroelectric thin films were successfully prepared on p-Si(100) substrates using metalorganic solution deposition process. The orientation and formation of 5-layers thin films were studied under different technologic condition using XRD. Experiment results indicated that  increase in annealing time at 700o C after preannealing for 10min at 400oC can remarkably increased (200)- orientation of the films either at high content of citric acid or at low content of citric acid in the precursor solution, and high content of citric acid increased the film thickness and was conducive to the a-orientation of the films with the preannealing, low concentration of the solution was conducive to the c-orientation of the films without the preannealing